Magneto-optical studies of n-GaAs under high hydrostatic pressureWASILEWSKI, Z; STRADLING, R. A.Semiconductor science and technology. 1986, Vol 1, Num 4, pp 264-274, issn 0268-1242Article

Far infrared magneto-optics of InAs_1-xP_x alloys under hydrostatic pressureSOTOMAYOR TORRES, C. M; STRADLING, R. A.Semiconductor science and technology. 1987, Vol 2, Num 6, pp 323-328, issn 0268-1242Article

Comments on the identification of high-order spectral lines of donors in semiconductors in intermediate magnetic fieldsARMISTEAD, C. J; STRADLING, R. A; WASILEWSKI, Z et al.Semiconductor science and technology. 1989, Vol 4, Num 7, pp 557-564, issn 0268-1242, 8 p.Article

High pressure cell for magneto-optical experimentsWASILEWSKI, Z; POROWSKI, S; STRADLING, R. A et al.Journal of physics. E. Scientific instruments. 1986, Vol 19, Num 6, pp 480-482, issn 0022-3735Article

Shubnikov-de Haas measurements in indium antimonideSTAROMLYNSKA, J; FINLAYSON, D. M; STRADLING, R. A et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 33, pp 6373-6386, issn 0022-3719Article

Intersubband Raman spectroscopy of two-dimensional electron gases in GaSb/InAs quantum wellsLI, Y. B; STRADLING, R. A; ARTUS, L et al.Semiconductor science and technology. 1996, Vol 11, Num 8, pp 1137-1145, issn 0268-1242Article

Quantum transport in InAs_1-x/InSb strained layer superlatticesTAN LE; NORMAN, A. G; YUEN, W. T et al.Surface science. 1994, Vol 305, Num 1-3, pp 337-342, issn 0039-6028Conference Paper

Interband magneto-optics of InAs_1-xSb_xSMITH, S. N; PHILLIPS, C. C; THOMAS, R. H et al.Semiconductor science and technology. 1992, Vol 7, Num 7, pp 900-906, issn 0268-1242Article

Simple calculation of the Landau levels of narrow-gap semiconductors in the Kane modelASKENAZY, S; WALLACE, P. R; STRADLING, R. A et al.Physics letters. A. 1984, Vol 106, Num 4, pp 184-186, issn 0375-9601Article

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth processDEBNATH, M. C; ZHANG, T; ROBERTS, C et al.Journal of crystal growth. 2004, Vol 267, Num 1-2, pp 17-21, issn 0022-0248, 5 p.Article

Boundary scattering in wet-etched InAs/GaSb heterostructure wires : with and without magnetic fieldRAHMAN, F; THORNTON, T. J; GALLAGHER, B. L et al.Semiconductor science and technology. 1999, Vol 14, Num 5, pp 478-483, issn 0268-1242Article

Picosecond free-electron laser studies of Auger recombination in arsenic-rich InAs_1-xSb_x strained layer superlattices at 300 KCIESLA, C. M; MURDIN, B. N; PULLIN, M. J et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 5, pp 331-335, issn 1350-2433Article

Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxyLI, Y. B; STRADLING, R. A; KNIGHT, T et al.Semiconductor science and technology. 1993, Vol 8, Num 1, pp 101-111, issn 0268-1242Article

Raman scattering by plasmon-phonon modes in highly doped n-IsAs grown by molecular beam epitaxyLI, Y. B; FERGUSON, I. T; STRADLING, R. A et al.Semiconductor science and technology. 1992, Vol 7, Num 9, pp 1149-1154, issn 0268-1242Article

High-pressure far-infrared magneto-optical and luminescence studies of electronic states of impurity donors ― D(X) centres ― in high purity GaAsDMOCHOWSKI, J. E; STRADLING, R. A; WANG, P. D et al.Semiconductor science and technology. 1991, Vol 6, Num 6, pp 476-482, issn 0268-1242, 7 p.Article

Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limitSKURAS, E; KUMAR, R; SINGLETON, J et al.Semiconductor science and technology. 1991, Vol 6, Num 6, pp 535-546, issn 0268-1242, 12 p.Article

Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better ?FERGUSON, I. T; NORMAN, A. G; JOYCE, B. A et al.Applied physics letters. 1991, Vol 59, Num 25, pp 3324-3326, issn 0003-6951Article

Donor-related structure observed in the magnetoresistance of high-purity n-GaAs and InP observed under warm electron conditions and at low temperaturesHOLMES, S. N; WANG, P. D; COWAN, D. A et al.Semiconductor science and technology. 1990, Vol 5, Num 2, pp 150-158, issn 0268-1242, 9 p.Article

First observation of a two-dimensional electron gas at the interface of α-Sn/InSb (100) grown by molecular beam epitaxyYUEN, W. T; LIU, W. K; HOLMES, S. N et al.Semiconductor science and technology. 1989, Vol 4, Num 9, pp 819-823, issn 0268-1242Article

In situ Raman spectroscopy of the selective etching of antimonides in GaSb/AlSb/InAs heterostructuresGATZKE, C; WEBB, S. J; FOBELETS, K et al.Semiconductor science and technology. 1998, Vol 13, Num 4, pp 399-403, issn 0268-1242Article

Alloy effects on the Raman spectra of Si_1-xGe_x and calibration protocols for alloy compositions based on polarization measurementsRATH, S; HSIEH, M. L; ETCHEGOIN, P et al.Semiconductor science and technology. 2003, Vol 18, Num 6, pp 566-575, issn 0268-1242, 10 p.Article

Fourier transform spectroscopic studies of a germanium hot hole laserLEWIS, D. E; STRADLING, R. A; BIRCH, J. R et al.Infrared physics. 1992, Vol 33, Num 4, pp 293-299, issn 0020-0891Article

Donor identification in neutron-transmutation-doped GaAs and InPNAJDA, S. P; HOLMES, S; STRADLING, R. A et al.Semiconductor science and technology. 1989, Vol 4, Num 9, pp 791-796, issn 0268-1242, 6 p.Article

New bound spin-flip transitions in n-InSbKUCHAR, F; MEISELS, R; STRADLING, R. A et al.Solid state communications. 1984, Vol 52, Num 5, pp 487-489, issn 0038-1098Article

An experimental and theoretical study of intersubband transition in InSb and InAs asymmetric doping superlatticesVAGHJIANI, H. L; PHILLIPS, C. C; JOHNSON, E. A et al.Semiconductor science and technology. 1995, Vol 10, Num 8, pp 1103-1107, issn 0268-1242Article